Showing posts with label Broadband Power Amplifier. Show all posts
Showing posts with label Broadband Power Amplifier. Show all posts

Thursday, November 15, 2012

40W Broadband VHF RF Power Amplifier 88-108 MHz

This RF power amplifier design is to boost the output power of low power FM broadcast band exciters based on Motorola MRF171A MOSFET with power output 40W. To reduce the harmonics to an acceptable level, Integrated 7 pole Chebyshev low pass harmonic filter (LPF) is added at the final section.

Component Choices
As the input power is only half a watt, standard ceramic capacitors and trimmers were used in the input matching circuit. L1 and L2 (refer to schematic) could have been made much smaller, but were kept big for consistency with the inductors used in the output network. On the output network, mica metal clad capacitors and mica compression trimmers were used to handle the power and keep component losses to a minimum. The wideband choke L3 provides some lossy reactance at lower RF frequencies, C8 takes care of AF (audio frequency) decoupling.

The use of an enhancement mode N-channel MOSFET (a positive voltage biases the device into conduction) means the bias circuitry is simple. A potential divider taps off the required voltage from a low voltage stabilised by a 5.6V zener diode. The second 5.6V zener, D2, is fitted as a precautionary measure to ensure excessive voltage are not applied to the gate of the FET, this would certainly result in the destruction of the device. Purists would temperature stabilise the bias current, but as the bias is not critical in this application, this was not bothered with.

A BNC socket had been used for the RF input, due to the low RF input power. I've used N type for the RF output, I don't use BNC for above about 5W and I don't like UHF style connectors. Personally, I don't recommend using UHF connectors above 30MHz.

RF Power Amplifier Schematic-Printed Circuit Board






Power Amplifier Construction
The Power amplifier was constructed in a small aluminium diecast box. RF input and output connections are made by coaxial sockets. The power supply is routed through a ceramic feedthrough capacitor bolted in the wall of the box. This constructional techniques results in excellent shielding, preventing RF radiation escaping from the amplifier. Without it, significant amounts of RF radiation could be radiated, interfering with other sensitive circuits such as VCOs and audio stages, also significant amounts of harmonic radiation could occur.

The base of the power device sits through a cut-out in the floor of the diecast box and is bolted directly onto a small extruded aluminium heatsink. An alternative would have the base of the power device sitting on the floor of the diecast box. This is not recommended for two reasons, both concerned with providing an effective path to conduct heat from the FET. Firstly the floor of the diecast box is not particularly smooth, which results in a poor thermal path. Secondly, having the floor of the diecast box in the thermal path introduces more mechanical interfaces and hence more thermal resistance. Another advantage of the chosen constructional technique is that it correctly aligns the device leads with the top face of the circuit board.

Using the specified heatsink will require the use of forced air cooling (a fan). If you plan not to use a fan, a much bigger heatsink will be required, and the amplifier should be mounted with the heatsink fins vertical to maximise cooling by natural convection. RF Power Amplifier Part List

Source: A Design for a 40W broadband VHF RF Power Amplifier for FM broadcast
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Friday, September 23, 2011

40W Broadband FM RF Power Amplifier

Here's broadband RF power amplifier for FM amplifier design is based on Motorola MRF171A MOSFET. The amplifier was constructed in a small aluminium diecast box. RF input from transmitter and output connections are made by coaxial sockets. The power supply is routed through a ceramic feedthrough capacitor bolted in the wall of the box.

This constructional techniques results in excellent shielding, preventing RF radiation escaping from the amplifier. Without it, significant amounts of RF radiation could be radiated, interfering with other sensitive circuits such as VCOs and audio stages, also significant amounts of harmonic radiation could occur.



Any RF power amplifier must be followed by a low pass filter (LPF) to reduce the harmonics to an acceptable level. What this level is in a unlicensed application is a moot point, but as the output power is increased, more attention must be be paid to the harmonic suppression.

In this RF power amplifier design used a 7 pole Chebyshev low pass filter. A Chebyshev was chosen as the phase and amplitude ripple within the passband was not critical, and the Chebyshev gives a better stop band attenuation than compared to say, a Butterworth. The design stopband was chosen to 113MHz, giving a 5MHz implementation margin from the highest desired passband frequency at 108MHz and the start of the stopband at 113MHz.

The next critical design parameter was the passband ripple. For a single frequency design it is normal practice to choose a large passband ripple, for example 1dB, and tune the peak of the last passband maxima to the desired output frequency. This gives the best stopband attenuation because greater passband ripple results in more rapid stopband attenuation. A seven pole filter has 7 reactive elements, in this design four capacitors and three inductors. The more poles, the better the stopband attenuation, at the expense of increased complexity and more passband insertion loss. An odd number of poles is required as both the input and output impedance was designed to be 50R.


40W Broadband FM RF Power Amplifier
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Tuesday, June 14, 2011

Broadband UHF Power Amplifier For TV Transposers 3W

A Broadband RF Amplifier design is presented, suitable for application in TV transposers, operating in UHF band IV and V(470 - 860) MHz, with simple printed circuit board.


The Rf power amplifier design is based on a BLW898 bipolar transistor. Typical results at the recommended class-A biaspoint (25 V/1.1 A) for the total module include a 3-tone IMD level of -64 dB (fvision = -8 dB, fsideband = -16 dB and fsound = -10 dB) and an average gain of 10.5 dB at 3 W peak-sync output power in the (470 - 860) MHz frequency range.


The BLW898 is a bipolar linear power transistor designed to operate in the (470 - 860) MHz range. The transistor isencapsulated in a SOT171A 6-lead rectangular flange package with a ceramic cap. The specified output power is 3 W peak-sync in class-A. The intermodulation distortion level (IMD) < -63 dB (fvision = -8 dB, fsideband = -16 dB and fsound = -10 dB) and gain >10 dB at 860 MHz.For application in TV transposers for Band IV/V (470 - 860) MHz a wideband linear power amplifier has been designed operating in class-A. It is suitable for driving higher power stages in TV-transposers. (datasheet)
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